62712 tkim/21710qa tkim tc-00002247 no. a1654-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 ATP302 p-channel power mosfet ? 60v, ? 70a, 13m , atpak stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. 1 : gate 2 : drain 3 : source 4 : drain atpak 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 features ? on-resistance r ds (on)1=10m (typ.) ? input capacitance ciss=5400pf (typ.) ? 4.5v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d --70 a drain current (pulse) i dp pw 10 s, duty cycle 1% --280 a allowable power dissipation p d tc=25 c70w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 197 mj avalanche current *2 i av --42 a note : * 1 v dd =--36v, l=100 h, i av =--42a * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7057-001 ordering number : ena1654a ATP302-tl-h product & package information ? package : atpak ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl ATP302 lot no. 1 3 2,4
ATP302 no. a1654-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds = -- 60v, v gs =0v --10 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds = -- 10v, i d = --35 a 75 s static drain-to-source on-state resistance r ds (on)1 i d = -- 35a, v gs = -- 10v 10 13 m r ds (on)2 i d = -- 35a, v gs = -- 4.5v 13 18 m input capacitance ciss v ds =--20v, f=1mhz 5400 pf output capacitance coss 500 pf reverse transfer capacitance crss 370 pf turn-on delay time t d (on) see speci ed test circuit. 35 ns rise time t r 430 ns turn-off delay time t d (off) 420 ns fall time t f 500 ns total gate charge qg v ds =--36v, v gs =--10v, i d =--70a 115 nc gate-to-source charge qgs 20 nc gate-to-drain ?miller? charge qgd 25 nc diode forward voltage v sd i s =--70a, v gs =0v --1.0 --1.5 v switching time test circuit avalanche resistance test circuit ordering information device package shipping memo ATP302-tl-h atpak 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d = --35a r l =1.03 v dd = --36v v out v in 0v --10v v in ATP302 50 0v --10v 50 rg v dd l ATP302
ATP302 no. a1654-3/7 | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds i s -- v sd it15341 it15338 --50 --25 150 0 --30 --10 --15 --20 --25 -- 5 1000 2 it15345 it15343 it15342 --0.1 --1.0 23 57 3 100 --1.4 --1.2 --1.0 --0.6 --0.4 --0.8 --0.2 0 --0.001 --0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 3 2 --0.1 --1.0 --10 --100 7 5 2 2 3 10 1.0 7 5 7 2 10000 2 --10 --100 357 7 5 23 --0.1 --1.0 23 57 2 --10 --100 357 7 5 23 0 25 50 75 100 125 3 5 7 3 5 7 2 single pulse tc= --25 c 25 c 75 c v ds = --10v tc=75 c 2 5 c --25 c ciss crss it15344 100 2 3 5 7 1000 2 2 3 5 7 t d (off) v dd = --36v v gs = --10v f=1mhz t r --0.2 --0.4 --1.2 --0.8 --0.6 --1.4 --1.6 --2.0 --1.8 --1.0 0 0 --20 --40 --140 --120 --100 --80 --60 it15340 --2 --4 --6 --8 --10 -- 3 -- 5 -- 7 -- 9 0 30 10 20 15 25 5 0 5 40 20 15 10 25 30 35 it15339 tc=25 c v gs = --3.0v t f v gs = --4.5v, i d = - -35a v gs = --10v, i d = --35a --8.0v co ss t d (on) --4.5v --6.0v --10.0v single pulse i d = --50a --25 c 25 c tc=75 c 75 c 25 c tc= --25 c --25 c tc=75 c 0 --20 --40 --60 --140 --120 --100 --80 0 --0.5 --1.5 --2.0 --1.0 --2.5 --4.5 --4.0 --5.0 --3.5 --3.0 0 v ds = --10v 25 c v gs =0v single pulse
ATP302 no. a1654-4/7 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it10478 a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it15347 it15346 020 60 40 100 80 120 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 v ds = --36v i d = --70a --0.1 --1.0 2 3 5 7 2 3 5 7 2 3 5 7 5 2 7 3 --10 a s o --0.1 i dp = --280a i d = --70a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). --1.0 23 57 --10 23 57 23 57 --100 10 s --100 tc=25 c single pulse pw 10 s it15348 0 0 20 40 60 80 100 140 120 60 50 30 20 40 10 80 70 160
ATP302 no. a1654-5/7 taping speci cation ATP302-tl-h
ATP302 no. a1654-6/7 outline drawing land pattern example ATP302-tl-h mass (g) unit 0.266 * for reference mm unit: mm 6.5 6.7 1.6 2 2.3 2.3 1.5
ATP302 ps no. a1654-7/7 note on usage : since the ATP302 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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